KOSTEC introduces its advanced block bonding solutions designed to enable next-generation power semiconductor platforms based on SiC and GaN technologies.

By integrating copper-based components such as Cu blocks, clips, pillars, and embedded T-coins/I-coins, KOSTEC’s block bonding technology supports high-density vertical integration in QFN 3D-stack power modules. This approach significantly enhances both electrical performance and thermal management, addressing the growing demand for high-efficiency power modules in AI servers, power supplies, and hyperscale data centers.

In addition, KOSTEC provides innovative solutions for Double-Sided Cooling (DSC) power modules. Through the use of chip spacers and via spacers—such as KCMC® composite materials—these solutions enable superior heat dissipation, CTE matching between SiC/GaN dies and substrates, and improved mechanical reliability. This results in enhanced long-term performance and stability in high-power-density applications.

KOSTEC continues to lead the advancement of power semiconductor packaging by optimizing both electrical and thermal interfaces at the structural level, delivering reliable and high-performance solutions for next-generation power electronics.